Nanosheet field-effect transistor device and method of forming

ABSTRACT

A semiconductor device includes: a fin protruding above a substrate; source/drain regions over the fin; nanosheets between the source/drain regions, where the nanosheets comprise a first semiconductor material; inner spacers between the nanosheets and at opposite ends of the nanosheets, where there is an air gap between each of the inner spacers and a respective source/drain region of the source/drain regions; and a gate structure over the fin and between the source/drain regions.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. application Ser. No.16/882,965, filed on May 26, 2020 and entitled “Nanosheet Field-EffectTransistor Device and Method of Forming,” which claims the benefit ofU.S. Provisional Application No. 62/955,154, filed on Dec. 30, 2019 andentitled “Super Inner Spacer Process and Design for Gate-All-Around(GAA) Device,” which applications are hereby incorporated herein byreference in their entireties.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as, for example, personal computers, cell phones, digital cameras,and other electronic equipment. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductor layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. However, asthe minimum features sizes are reduced, additional problems arise thatshould be addressed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates an example of a nanosheet field-effect transistor(NSFET) device in a three-dimensional view, in accordance with someembodiments.

FIGS. 2, 3A, 3B, 4A, 4B, 5A, 5B, and 6-17 are cross-sectional views of ananosheet field-effect transistor device at various stages ofmanufacturing, in accordance with an embodiment.

FIGS. 18 and 19 are cross-sectional views of a nanosheet field-effecttransistor device at a certain stage of manufacturing, in accordancewith another embodiment.

FIG. 20 is a flow chart of a method of forming a semiconductor device,in some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. Throughout thediscussion herein, unless otherwise specified, the same or similarreference numerals in different figures refer to the same or similarcomponent formed by a same or similar process using a same or similarmaterial(s).

In accordance with some embodiments, during formation of a nanosheetfield-effect transistor (NSFET) device, dummy inner spacers are formedbetween the nanosheets, and a material layer (which may be a layer of asemiconductor material or a layer of a dielectric material) is formedover the dummy inner spacers. The dummy inner spacers are subsequentlyremoved during a replacement gate process, and inner spacers are formedto replace the dummy inner spacers. The inner spacers seal air gapsbetween the inner spacers and the material layer. The air gapsadvantageously lower the k-value and reduces the parasitic capacitanceof the device formed.

FIG. 1 illustrates an example of a nanosheet field-effect transistor(NSFET) device in a three-dimensional view, in accordance with someembodiments. The NSFET device comprises semiconductor fins 90 (alsoreferred to as fins) protruding above a substrate 50. A gate electrode122 (e.g., a metal gate) is disposed over the fins, and source/drainregions 112 are formed on opposing sides of the gate electrode 122. Aplurality of nanosheets 54 are formed over the fins 90 and betweensource/drain regions 112. Isolation regions 96 are formed on opposingsides of the fins 90. A gate dielectric layer 120 is formed around thenanosheets 54. Gate electrodes 122 are over and around the gatedielectric layer 120.

FIG. 1 further illustrates reference cross-sections that are used inlater figures. Cross-section A-A is along a longitudinal axis of a gateelectrode 122 and in a direction, for example, perpendicular to thedirection of current flow between the source/drain regions 112 of anNSFET device. Cross-section B-B is perpendicular to cross-section A-Aand is along a longitudinal axis of a fin and in a direction of, forexample, a current flow between the source/drain regions 112 of theNSFET device. Subsequent figures refer to these reference cross-sectionsfor clarity.

FIGS. 2, 3A, 3B, 4A, 4B, 5A, 5B, and 6-17 are cross-sectional views of ananosheet field-effect transistor (NSFET) device 100 at various stagesof manufacturing, in accordance with an embodiment.

In FIG. 2, a substrate 50 is provided. The substrate 50 may be asemiconductor substrate, such as a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, or the like, which may bedoped (e.g., with a p-type or an n-type dopant) or undoped. Thesubstrate 50 may be a wafer, such as a silicon wafer. Generally, an SOIsubstrate is a layer of a semiconductor material formed on an insulatorlayer. The insulator layer may be, for example, a buried oxide (BOX)layer, a silicon oxide layer, or the like. The insulator layer isprovided on a substrate, typically a silicon substrate or a glasssubstrate. Other substrates, such as a multi-layered or gradientsubstrate may also be used. In some embodiments, the semiconductormaterial of the substrate 50 includes silicon; germanium; a compoundsemiconductor including silicon carbide, gallium arsenic, galliumphosphide, indium phosphide, indium arsenide, and/or indium antimonide;an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs,GaInP, and/or GaInAsP; or combinations thereof.

A multi-layer stack 64 is formed on the substrate 50. The multi-layerstack 64 includes alternating layers of a first semiconductor material52 and a second semiconductor material 54. In FIG. 2, layers formed bythe first semiconductor material 52 are labeled as 52A, 52B, 52C, and52D, and layers formed by the second semiconductor material 54 arelabeled as 54A, 54B, 54C, and 54D. The number of layers formed by thefirst and the second semiconductor materials illustrated in FIG. 2 aremerely non-limiting examples. Other numbers of layers are also possibleand are fully intended to be included within the scope of the presentdisclosure.

In some embodiments, the first semiconductor material 52 is an epitaxialmaterial appropriate for forming channel regions of, e.g., p-type FETs,such as silicon germanium (Si_(x)Ge_(1-x), where x can be in the rangeof 0 to 1), and the second semiconductor material 54 is an epitaxialmaterial appropriate for forming channel regions of, e.g., n-type FETs,such as silicon. The multi-layer stacks 64 (may also be referred to asan epitaxial material stack) will be patterned to form channel regionsof an NSFET in subsequent processing. In particular, the multi-layerstacks 64 will be patterned to form horizontal nanosheets, with thechannel regions of the resulting NSFET including multiple horizontalnanosheets.

The multi-layer stacks 64 may be formed by an epitaxial growth process,which may be performed in a growth chamber. During the epitaxial growthprocess, the growth chamber is cyclically exposed to a first set ofprecursors for selectively growing the first semiconductor material 52,and then exposed to a second set of precursors for selectively growingthe second semiconductor material 54, in some embodiments. The first setof precursors includes precursors for the first semiconductor material(e.g., silicon germanium), and the second set of precursors includesprecursors for the second semiconductor material (e.g., silicon). Insome embodiments, the first set of precursors includes a siliconprecursor (e.g., silane) and a germanium precursor (e.g., a germane),and the second set of precursors includes the silicon precursor butomits the germanium precursor. The epitaxial growth process may thusinclude continuously enabling a flow of the silicon precursor to thegrowth chamber, and then cyclically: (1) enabling a flow of thegermanium precursor to the growth chamber when growing the firstsemiconductor material 52; and (2) disabling the flow of the germaniumprecursor to the growth chamber when growing the second semiconductormaterial 54. The cyclical exposure may be repeated until a targetquantity of layers is formed.

FIGS. 3A, 3B, 4A, 4B, 5A, 5B, and 6-17 are cross-sectional views of theNSFET device 100 at subsequent stages of manufacturing, in accordancewith an embodiment. FIGS. 3A, 4A, 5A, and 6-16 are cross-sectional viewsalong cross-section B-B in FIG. 1. FIGS. 3B, 4B, and 5B arecross-sectional views along cross-section A-A in FIG. 1. FIG. 17 is azoomed-in view of a portion of the NSFET device 100 illustrated in FIG.16. Although one fin and one gate structure are illustrated in thefigures as a non-limiting example, it should be appreciated that othernumbers of fins and other numbers of gate structures may also be formed.

In FIGS. 3A and 3B, a fin structure 91 are formed protruding above thesubstrate 50. The fin structure 91 includes a semiconductor fin 90 and ananostructure 92 overlying the semiconductor fin 90. The nanostructure92 and the semiconductor fin 90 may be formed by etching trenches in themulti-layer stack 64 and the substrate 50, respectively.

The fin structure 91 may be patterned by any suitable method. Forexample, the fin structure 91 may be patterned using one or morephotolithography processes, including double-patterning ormulti-patterning processes. Generally, double-patterning ormulti-patterning processes combine photolithography and self-alignedprocesses, allowing patterns to be created that have, for example,pitches smaller than what is otherwise obtainable using a single, directphotolithography process. For example, in one embodiment, a sacrificiallayer is formed over a substrate and patterned using a photolithographyprocess. Spacers are formed alongside the patterned sacrificial layerusing a self-aligned process. The sacrificial layer is then removed, andthe remaining spacers may then be used to pattern, e.g., the finstructure 91.

In some embodiments, the remaining spacers are used to pattern a mask94, which is then used to pattern the fin structure 91. The mask 94 maybe a single layer mask, or may be a multilayer mask such as a multilayermask that includes a first mask layer 94A and a second mask layer 94B.The first mask layer 94A and second mask layer 94B may each be formedfrom a dielectric material such as silicon oxide, silicon nitride, acombination thereof, or the like, and may be deposited or thermallygrown according to suitable techniques. The first mask layer 94A andsecond mask layer 94B are different materials having a high etchingselectivity. For example, the first mask layer 94A may be silicon oxide,and the second mask layer 94B may be silicon nitride. The mask 94 may beformed by patterning the first mask layer 94A and the second mask layer94B using any acceptable etching process. The mask 94 may then be usedas an etching mask to etch the substrate 50 and the multi-layer stack64. The etching may be any acceptable etch process, such as a reactiveion etch (RIE), neutral beam etch (NBE), the like, or a combinationthereof. The etching is an anisotropic etching process, in someembodiments. After the etching process, the patterned multi-layer stack64 form the nanostructure 92, and the patterned substrate 50 form thesemiconductor fin 90, as illustrated in FIGS. 3A and 3B. Therefore, inthe illustrated embodiment, the nanostructure 92 also includesalternating layers of the first semiconductor material 52 and the secondsemiconductor material 54, and the semiconductor fin 90 is formed of asame material (e.g., silicon) as the substrate 50.

Next, in FIGS. 4A and 4B, Shallow Trench Isolation (STI) regions 96 areformed over the substrate 50 and on opposing sides of the fin structure91. As an example to form the STI regions 96, an insulation material maybe formed over the substrate 50. The insulation material may be anoxide, such as silicon oxide, a nitride, the like, or a combinationthereof, and may be formed by a high density plasma chemical vapordeposition (HDP-CVD), a flowable CVD (FCVD) (e.g., a CVD-based materialdeposition in a remote plasma system and post curing to make it convertto another material, such as an oxide), the like, or a combinationthereof. Other insulation materials formed by any acceptable process maybe used. In the illustrated embodiment, the insulation material issilicon oxide formed by a FCVD process. An anneal process may beperformed after the insulation material is formed.

In an embodiment, the insulation material is formed such that excessinsulation material covers the fin structure 91. In some embodiments, aliner is first formed along surfaces of the substrate 50 and finstructure 91, and a fill material, such as those discussed above isformed over the liner. In some embodiments, the liner is omitted.

Next, a removal process is applied to the insulation material to removeexcess insulation material over the fin structure 91. In someembodiments, a planarization process such as a chemical mechanicalpolish (CMP), an etch back process, combinations thereof, or the likemay be utilized. The planarization process exposes the nanostructure 92such that top surfaces of the nanostructure 92 and the insulationmaterial are level after the planarization process is complete. Next,the insulation material is recessed to form the STI regions 96. Theinsulation material is recessed such that the nanostructure 92 protrudesfrom between neighboring STI regions 96. Top portions of thesemiconductor fin 90 may also protrude from between neighboring STIregions 96. Further, the top surfaces of the STI regions 96 may have aflat surface as illustrated, a convex surface, a concave surface (suchas dishing), or a combination thereof. The top surfaces of the STIregions 96 may be formed flat, convex, and/or concave by an appropriateetch. The STI regions 96 may be recessed using an acceptable etchingprocess, such as one that is selective to the material of the insulationmaterial (e.g., etches the material of the insulation material at afaster rate than the material of the semiconductor fins 90 and thenanostructures 92). For example, a chemical oxide removal with asuitable etchant such as dilute hydrofluoric (dHF) acid may be used.

Still referring to FIGS. 4A and 4B, a dummy dielectric layer 97 isformed over the nanostructure 92 and over the STI region 96. The dummydielectric layer 97 may be, for example, silicon oxide, silicon nitride,a combination thereof, or the like, and may be deposited or thermallygrown according to acceptable techniques. In an embodiment, a layer ofsilicon is conformally formed over the nanostructure 92 and over theupper surface of the STI regions 96, and a thermal oxidization processis performed to convert the deposited silicon layer into an oxide layeras the dummy dielectric layer 97.

Next, in FIGS. 5A and 5B, a dummy gate 102 are formed over the fin 90and over the nanostructure 92. To form the dummy gate 102, a dummy gatelayer may be formed over the dummy dielectric layer 97. The dummy gatelayer may be deposited over the dummy dielectric layer 97 and thenplanarized, such as by a CMP. The dummy gate layer may be a conductivematerial and may be selected from a group including amorphous silicon,polycrystalline-silicon (polysilicon), poly-crystallinesilicon-germanium (poly-SiGe), or the like. The dummy gate layer may bedeposited by physical vapor deposition (PVD), CVD, sputter deposition,or other techniques known and used in the art. The dummy gate layer maybe made of other materials that have a high etching selectivity from theisolation regions 96.

Masks 104 are then formed over the dummy gate layer. The masks 104 maybe formed from silicon nitride, silicon oxynitride, combinationsthereof, or the like, and may be patterned using acceptablephotolithography and etching techniques. In the illustrated embodiment,the mask 104 includes a first mask layer 104A (e.g., a silicon oxidelayer) and a second mask layer 104B (e.g., a silicon nitride layer). Thepattern of the masks 104 is then transferred to the dummy gate layer byan acceptable etching technique to form the dummy gate 102, and thentransferred to the dummy dielectric layer by acceptable etchingtechnique to form dummy gate dielectrics 97. The dummy gate 102 coverrespective channel regions of the nanostructures 92. The pattern of themasks 104 may be used to physically separate the dummy gate 102 fromadjacent dummy gates. The dummy gate 102 may also have a lengthwisedirection substantially perpendicular to the lengthwise direction of thefins 90. The dummy gate 102 and the dummy gate dielectric 97 arecollectively referred to as dummy gate structure, in some embodiments.

Next, a gate spacer layer 107 is formed by conformally depositing aninsulating material over the nanostructure 92, the STI regions 96, andthe dummy gate 102. The insulating material may be silicon nitride,silicon carbonitride, a combination thereof, or the like. In someembodiments, the gate spacer layer 107 includes multiple sublayers. Forexample, a first sublayer 108 (sometimes referred to as a gate sealspacer layer) may be formed by thermal oxidation or a deposition, and asecond sublayer 109 (sometimes referred to as a main gate spacer layer)may be conformally deposited on the first sublayer 108.

FIG. 5B illustrates cross-sectional views of the NSFET device 100 inFIG. 5A, but along cross-section F-F in FIG. 5A. The cross-section F-Fin FIG. 5A corresponds to the cross-section A-A in FIG. 1.

Next, in FIG. 6, the gate spacer layer 107 is etched by an anisotropicetching process to form gate spacers 107. The anisotropic etchingprocess may remove horizontal portions of the gate spacer layer 107(e.g., portions over the STI regions 96 and the dummy gate 102), withremaining vertical portions of the gate spacer layer 107 (e.g., alongsidewalls of the dummy gate 102 and the dummy gate dielectric 97)forming the gate spacers 107.

After the formation of the gate spacers 107, implantation for lightlydoped source/drain (LDD) regions (not shown) may be performed.Appropriate type (e.g., p-type or n-type) impurities may be implantedinto the exposed nanostructure 92 and/or the semiconductor fin 90. Then-type impurities may be the any suitable n-type impurities, such asphosphorus, arsenic, antimony, or the like, and the p-type impuritiesmay be the any suitable p-type impurities, such as boron, BF₂, indium,or the like. The lightly doped source/drain regions may have aconcentration of impurities of from about 10¹⁵ cm⁻³ to about 10¹⁶ cm⁻³.An anneal process may be used to activate the implanted impurities.

Next, in FIG. 7, openings 110 (may also be referred to as recesses) areformed in the nano structure 92. The openings 110 may extend through thenanostructure 92 and into the semiconductor fin 90. The openings 110 maybe formed by any acceptable etching technique, using, e.g., the dummygate 102 as an etching mask. The openings 110 exposes end portions ofthe first semiconductor material 52 and end portions of the secondsemiconductor material 54.

Next, in FIG. 8, after the openings 110 are formed, a selective etchingprocess (e.g., a wet etch process using an etching chemical) isperformed to recess end portions of the first semiconductor material 52exposed by the openings 110 without substantially attacking the secondsemiconductor material 54. After the selective etching process, recesses52R are formed in the first semiconductor material 52 at locations wherethe removed end portions used to be.

Next, in FIG. 9, a dummy inner spacer layer 55 is formed (e.g.,conformally) in the openings 110. The dummy inner spacer layer 55 linessidewalls and bottoms of the openings 110. The dummy inner spacer layer55 also lines surfaces of the recesses 52R. In the illustratedembodiment, a thickness of the dummy inner spacer layer 55 in therecesses 52R is larger than a thickness of the dummy inner spacer layer55 disposed outside the recesses 52R (e.g., along sidewalls of theopenings 110). The larger thickness of the dummy inner spacer layer 55in the recesses 52R may be caused by a faster deposition/accumulationrate of the deposited material at small/narrow spaces (e.g., inside therecesses 52R).

In some embodiments, the dummy inner spacer layer 55 is formed of asuitable dielectric material, such as silicon oxide, and may be formedby a suitable deposition method such as ALD, PVD, CVD, or the like. Thematerial of the dummy inner spacer layer 55 may be chosen to have a sameor similar etch rate as the first semiconductor material 52, such thatin a subsequent etching process to remove the first semiconductormaterial 52, dummy inner spacers 55 (formed by etching the dummy innerspacer layer 55) and the first semiconductor material 52 may be removedby a same etching process.

Next, in FIG. 10, an etching process is performed to remove portions ofthe dummy inner spacer layer 55 disposed outside the recesses 52R. Theremaining portions of the dummy inner spacer layer 55 (e.g., portionsdisposed inside the recesses 52R) form dummy inner spacers 55. In anembodiment, the etching process is a wet etch process using a suitableetchant such as dilute hydrofluoric (dHF) acid. The wet etch process maybe a timed process, such that the dummy inner spacer layer 55 disposedoutside the recesses 52R are removed while portions of the (thicker)dummy inner spacer layer 55 inside the recesses 52R remain to form thedummy inner spacers 55.

Next, in FIG. 11, a material layer 56 is formed in the recesses 52R overthe dummy inner spacers 55. In the example of FIG. 11, the materiallayer 56 is a semiconductor material, such as silicon, formed by asuitable formation method, such as an epitaxy process. In theillustrated embodiment, the material layer 56 and the secondsemiconductor material 54 are formed of a same material (e.g., silicon),although the material layer 56 may be formed of a different materialfrom the second semiconductor material 54.

In an embodiment, to form the material layer 56, a layer of epitaxialsilicon is formed conformally in the openings 110 and in the recesses52R. An etching process (e.g., an anisotropic etching process) is thenperformed to remove portions of the epitaxial silicon layer disposedoutside the recesses 52R, and portions of the (thicker) epitaxialsilicon layer inside the recesses 52R remain to form the material layer56. As illustrated in FIG. 11, the material layer 56 comprises multiplesegments, where each segment is disposed over (e.g., contacting) arespective dummy inner spacer 55. Using a semiconductor material (e.g.,silicon) as the material layer 56 is conducive to the formation ofsource/drain regions 112 in a subsequent process. In the example of FIG.11, the material layer 56 and the dummy inner spacers 55 do notcompletely fill the recesses 52R, and as a result, the subsequentlyformed source/drain regions 112 have a plurality of protrusions (see112P in FIG. 12) that extend into (e.g., fill) the remaining spaces ofthe recesses 52R.

Next, in FIG. 12, source/drain regions 112 are formed in the openings110. As illustrated in FIG. 12, the source/drain regions 112 fill theopenings 110, and have a plurality of protrusions 112P that fill therecesses 52R in the first semiconductor material 52. In the illustratedembodiment, the source/drain regions 112 are formed of an epitaxialmaterial(s), and therefore, may also be referred to as epitaxialsource/drain regions 112. In some embodiments, the epitaxialsource/drain regions 112 are formed in the openings 110 to exert stressin the respective channel regions of the NSFET device formed, therebyimproving performance. The epitaxial source/drain regions 112 are formedsuch that the dummy gate 102 is disposed between neighboring pairs ofthe epitaxial source/drain regions 112. In some embodiments, the gatespacers 107 are used to separate the epitaxial source/drain regions 112from the dummy gate 102 by an appropriate lateral distance so that theepitaxial source/drain regions 112 do not short out subsequently formedgate of the resulting NSFET device.

The epitaxial source/drain regions 112 are epitaxially grown in theopenings 110. The epitaxial source/drain regions 112 may include anyacceptable material, such as appropriate for n-type or p-type device.For example, when n-type devices are formed, the epitaxial source/drainregions 112 may include materials exerting a tensile strain in thechannel regions, such as silicon, SiC, SiCP, SiP, or the like. Likewise,when p-type devices are formed, the epitaxial source/drain regions 112may include materials exerting a compressive strain in the channelregions, such as SiGe, SiGeB, Ge, GeSn, or the like. The epitaxialsource/drain regions 112 may have surfaces raised from respectivesurfaces of the fins and may have facets.

The epitaxial source/drain regions 112 and/or the fins may be implantedwith dopants to form source/drain regions, similar to the processpreviously discussed for forming lightly-doped source/drain regions,followed by an anneal. The source/drain regions may have an impurityconcentration of between about 10¹⁹ cm⁻³ and about 10²¹ cm⁻³. The n-typeand/or p-type impurities for source/drain regions may be any of theimpurities previously discussed. In some embodiments, the epitaxialsource/drain regions 112 may be in situ doped during growth.

As a result of the epitaxy processes used to form the epitaxialsource/drain regions 112, upper surfaces of the epitaxial source/drainregions 112 have facets which expand laterally outward beyond sidewallsof the fin 90. In some embodiments, adjacent epitaxial source/drainregions 112 disposed over adjacent fins remain separated after theepitaxy process is completed. In other embodiments, these facets causeadjacent epitaxial source/drain regions 112 disposed over adjacent finsof a same NSFET to merge.

Next, in FIG. 13, a contact etch stop layer (CESL) 116 is formed (e.g.,conformally) over the source/drain regions 112 and over the dummy gate102, and a first inter-layer dielectric (ILD) 114 is then deposited overthe CESL 116. The CESL 116 is formed of a material having a differentetch rate than the first ILD 114, and may be formed of silicon nitrideusing PECVD, although other dielectric materials such as silicon oxide,silicon oxynitride, combinations thereof, or the like, and alternativetechniques of forming the CESL 116, such as low pressure CVD (LPCVD),PVD, or the like, could alternatively be used.

The first ILD 114 may be formed of a dielectric material, and may bedeposited by any suitable method, such as CVD, plasma-enhanced CVD(PECVD), or FCVD. Dielectric materials for the first ILD 114 may includesilicon oxide, Phospho-Silicate Glass (PSG), Boro-Silicate Glass (BSG),Boron-Doped Phospho-Silicate Glass (BPSG), undoped Silicate Glass (USG),or the like. Other insulation materials formed by any acceptable processmay be used.

Next, the dummy gate 102 is removed. To remove the dummy gate 102, aplanarization process, such as a CMP, is performed to level the topsurfaces of the first ILD 114 and CESL 116 with the top surfaces of thedummy gate 102 and gate spacers 107. The planarization process may alsoremove the masks 104 (see FIG. 5A) on the dummy gates 102 (if the mask104 has not been removed by the anisotropic etching process to form thegate spacers 107), and portions of the gate spacers 107 along sidewallsof the masks 104. After the planarization process, top surfaces of thedummy gate 102, gate spacers 107, and first ILD 114 are level.Accordingly, the top surfaces of the dummy gate 102 are exposed throughthe first ILD 114.

After the planarization process, the dummy gate 102 is removed in anetching step(s), so that a recess 103 is formed between the gate spacers107. In some embodiments, the dummy gate 102 is removed by ananisotropic dry etch process. For example, the etching process mayinclude a dry etch process using reaction gas(es) that selectively etchthe dummy gate 102 without etching the first ILD 114 or the gate spacers107. The recess 103 exposes the channel regions of the NSFET. Thechannel regions are disposed between neighboring pairs of the epitaxialsource/drain regions 112. During the removal of the dummy gate 102, thedummy gate dielectric 97 may be used as an etch stop layer when thedummy gate 102 is etched. The dummy gate dielectric 97 may then beremoved after the removal of the dummy gate 102. After removal of thedummy gate 102, the first semiconductor material 52 and the secondsemiconductor material 54 that were disposed under the dummy gate 102are exposed by the recess 103.

Next, the first semiconductor material 52 is removed to release thesecond semiconductor material 54. After the first semiconductor material52 is removed, the second semiconductor material 54 forms a plurality ofnanosheets 54 that extend horizontally (e.g., parallel to a major uppersurface of the substrate 50). The nanosheets 54 may be collectivelyreferred to as the channel regions or the channel layers of the NSFETdevice 100 formed. As illustrated in FIG. 13, gaps 53 (e.g., emptyspaces) are formed between the nanosheets 54 by the removal of the firstsemiconductor material 52. The nanosheets 54 may also be referred to asnanowires, and the NSFET device 100 may also be referred to as agate-all-around (GAA) device, in some embodiments.

In some embodiments, the first semiconductor material 52 is removed by aselective etching process using an etchant that is selective to (e.g.,having a higher etch rate for) the first semiconductor material 52, suchthat the first semiconductor material 52 is removed withoutsubstantially attacking the second semiconductor material 54. In anembodiment, an isotropic etching process is performed to remove thefirst semiconductor material 52. The isotropic etching process may beperformed using an etching gas, and optionally, a carrier gas, where theetching gas comprises F₂ and HF, and the carrier gas may be an inert gassuch as Ar, He, N₂, combinations thereof, or the like.

In some embodiments, the dummy inner spacers 55 are also removed by theetching process to remove the first semiconductor material 52. In otherembodiments, after the first semiconductor material 52 is removed, anadditional etching process is performed to remove (e.g., selectivelyremove) the dummy inner spacers 55. After the dummy inner spacers 55 areremoved, the material layer 56 (e.g., silicon) is exposed in the gaps53.

Next, in FIG. 14, an inner spacer layer 131 is formed (e.g.,conformally) in the recess 103 and around the nanosheets 54. In someembodiments, the inner spacer layer 131 is formed of a suitabledielectric material. Examples for the material of the inner spacer layer131 include silicon nitride (SiN), silicon oxynitride (SiON), siliconcarbon nitride (SiCN), silicon oxycarbonitride (SiOCN), silicon carbide(SiC), silicon oxide (SiO₂), or the like, formed by a suitabledeposition method such as ALD, PVD, CVD, or the like.

As illustrated in FIG. 14, in an area 132 proximate to the end portionof the nanosheet 54, due to the protrusion 112P of the source/drainregions 112 and the material layer 56 over the protrusion 112P, a smallspace (see label 133) is formed. The small space makes it easier to besealed by the inner spacer layer 131 to form an air gap 133. A zoomed-inview of the area 132 is illustrated in FIG. 17. Details of the air gap133 are discussed hereinafter. In some embodiments, due to the fasterdeposition/accumulation rate at small/narrow spaces, portions of theinner spacer layer 131 in the area 132 (e.g., portions contacting thematerial layer 56) has a larger thickness than other portions of theinner spacer layer.

Next, in FIG. 15, an etching process is performed to remove portions ofthe inner spacer layer 131. The etching process may be a wet etchprocess performed using a suitable etchant such as H₃PO₄. The etchingprocess may be a timed process, such that portions of the inner spacerlayer 131 outside the area 132 (e.g., around the middle portions of thenanosheets 54) are completely removed, while remaining portions of theinner spacer layer 131 inside the area 132 (e.g., portions contactingthe material layer 56 and sealing the air gaps 133) form inner spacers131. As illustrated in FIG. 15, each of the inner spacers 131 extendscontinuously between two adjacent nanosheets 54 or between a lowermostnanosheet 54 and the fin 90, and seals an air gap 133.

Next, in FIG. 16, a gate dielectric layer 120 is formed (e.g.,conformally) in the recess 103. The gate dielectric layer 120 wrapsaround the nanosheets 54, lines sidewalls of the first sublayer 108 ofthe gate spacers, and extends along the upper surface and sidewalls ofthe fin 90. In accordance with some embodiments, the gate dielectriclayer 120 comprises silicon oxide, silicon nitride, or multilayersthereof. In some embodiments, the gate dielectric layer 120 includes ahigh-k dielectric material, and in these embodiments, the gatedielectric layer 120 may have a k value greater than about 7.0, and mayinclude a metal oxide or a silicate of Hf, Al, Zr, La, Mg, Ba, Ti, orPb, or combinations thereof. The formation methods of the gatedielectric layer 120 may include Molecular-Beam Deposition (MBD), ALD,PECVD, and the like.

Next, a gate electrode material (e.g., an electrically conductivematerial) is formed in the recess 103 to form the gate electrode 122.The gate electrode 122 fills the remaining portions of the recess 103The gate electrode 122 may be made of a metal-containing material suchas Cu, Al, W, the like, combinations thereof, or multi-layers thereof,and may be formed by, e.g., electroplating, electroless plating, orother suitable method. After the filling of the gate electrodes 122, aplanarization process, such as a CMP, may be performed to remove theexcess portions of the gate dielectric layer 120 and the material of thegate electrodes 122, which excess portions are over the top surface ofthe first ILD 114. The remaining portions of material of the gateelectrode 122 and the gate dielectric layer 120 thus form replacementgate of the resulting NSFET device 100. The gate electrode 122 and thecorresponding gate dielectric layer 120 may be collectively referred toas a gate stack 123, a replacement gate structure 123, or a metal gatestructure 123. Each gate stack 123 extends over and around therespective nanosheets 54.

Although the gate electrode 122 is illustrated as a single layer in theexample of FIG. 16, one skilled in the art will readily appreciate thatthe gate electrode 122 may have a multi-layered structure and mayinclude a plurality layers, such as a barrier layer, a work functionlayer, a seed layer and a fill metal.

For example, a barrier layer may be formed conformally over the gatedielectric layer 120. The barrier layer may comprise an electricallyconductive material such as titanium nitride, although other materials,such as tantalum nitride, titanium, tantalum, or the like, mayalternatively be utilized. A work function layer may be formed over thebarrier layer. Exemplary p-type work function materials (may also bereferred to as p-type work function metals) include TiN, TaN, Ru, Mo,Al, WN, ZrSi₂, MoSi₂, TaSi₂, NiSi₂, WN, other suitable p-type workfunction materials, or combinations thereof. Exemplary n-type workfunction materials (may also be referred to as n-type work functionmetals) include Ti, Ag, TaAl, TaAlC, TiAlN, TaC, TaCN, TaSiN, Mn, Zr,other suitable n-type work function materials, or combinations thereof.A work function value is associated with the material composition of thework function layer, and thus, the work function layer is chosen to tuneits work function value so that a target threshold voltage V_(TH) isachieved in the device that is to be formed.

FIG. 17 is a zoomed-in view of the area 132 in FIG. 16. As illustratedin FIG. 17, the inner spacer 131 seals an air gap 133 disposed betweenthe inner spacer 131 and the material layer 56, and between two adjacentnanosheets 54. The air gap 133 may include an upper portion 133U overthe protrusion 112P of the source/drain regions 112, and a lower portion133L below the protrusion 112P. In some embodiments, the upper portion133U and the lower portions 133L of the air gap 133 are two separatesealed spaces. In some embodiments, the upper portion 133U and the lowerportion 133L have similar shapes (e.g., are substantially mirrorsymmetric about a horizontal center axis 112C of the protrusion 112P inFIG. 17). In the example of FIG. 17, the upper portion 133U (or thelower portion 133L) of the air gap 133 has a width W between the innerspacer 131 and the material layer 56, where the width W increasescontinuously along a vertical direction of FIG. 17 from the center oftwo adjacent nanosheets 54 toward one of the two adjacent nanosheets 54.In addition, the upper portion 133U (or the lower portion 133L) of theair gap 133 has a height H, which includes a first value H1 measuredbetween the inner spacer 131 and the material layer 56, and has a secondvalue H2 measured between the nanosheet 54 and the material layer 56,where H1 increases continuously along a horizontal direction of FIG. 17from the left to the right, and H2 decreases continuously along thehorizontal direction of FIG. 17 from the left to the right. In FIG. 17,the inner spacer 131 has a surface 131S1 facing and contacting the gatestack 123, and has a surface 131S2 facing the air gap 133. The materiallayer 56 may extend into the surface 131S2, as illustrated in FIG. 17.The surfaces 131S1 and 131S2 are curved surfaces. When looking along afirst direction from the inner spacer 131 toward the gate stack 123, thesurface 131S1 is a concave surface, and the surface 131S2 is a convexsurface; when looking along a second direction opposite to the firstdirection, the surface 131S1 is a convex surface, and the surface 131S2is a concave surface. In some embodiments, a distance S between adjacentnanosheets 54 is between about 5 nm and about 20 nm, a distance Dbetween the source/drain region 112 and the surface 131S1 of the innerspacer layer 131 is between about 5 nm and about 15 nm, and a thicknessT of the material layer 56 is between about 2 nm and about 7 nm. In someembodiments, the height H of the air gap 133 (e.g., 133U or 133L) isbetween about a quarter of the distance S and about half of the distanceS (e.g., 0.25S<H≤0.5S). In some embodiments, the width W of the air gap133 is between about D−T and about D−0.5T (e.g., D−T≤W<D−0.5T).

In some embodiments, the air gap 133 reduces the k value (e.g., theaverage k value) of the dielectric materials proximate to the gate stack123, thereby improving the device performance by reducing the parasiticcapacitance of the NSFET device 100.

Additional processing may be performed to finish fabrication of theNSFET device 100, as one of ordinary skill readily appreciates, thusdetails may not be repeated here. For example, a second ILD may bedeposited over the first ILD 114. Further, gate contacts andsource/drain contacts may be formed through the second ILD and/or thefirst ILD 114 to electrically couple to the gate electrode 122 and thesource/drain regions 112, respectively.

FIG. 18 is a cross-sectional view of a nanosheet field-effect transistordevice 100A at a certain stage of manufacturing, in accordance withanother embodiment. The NSFET device 100A is similar to the NSFET device100 of FIG. 16, but the material layer of FIG. 16 (e.g., a semiconductorlayer) is replaced with a material layer 57, which is a layer ofdielectric material. The material layer 57 may be formed using a same orsimilar processing (e.g., a deposition process followed by an etchingprocess) as discussed above with reference to FIG. 11 for the materiallayer 56. After the material layer 57 is formed, the same or similarprocessing as illustrated in FIGS. 12-16 may be performed to form thenanosheet field-effect transistor device 100A of FIG. 18. In someembodiments, the material of the material layer 57 is the same as thematerial of the inner spacers 131, such as silicon nitride. In otherembodiments, the material of the material layer 57 is a dielectricmaterial different from the dielectric material of the inner spacers131.

FIG. 19 is a zoomed-in view of the area 132 in FIG. 18. As illustratedin FIG. 19, the inner spacers 131 seals an air gap 133 disposed betweenthe material layer 57 and the inner spacer 131, and between two adjacentnanosheets 54. Details of the air gap 133, such as the shapes anddimensions, are the same as or similar to those of FIG. 17, thus are notrepeated here.

Variations of the disclosed embodiments are possible and are fullyintended to be included within the scope of the present disclosure. Forexample, depending on the type of device (e.g., n-type or p-type device)formed, the second semiconductor material 54 may be removed, and thefirst semiconductor material 52 may remain to form the nanosheets tofunction as the channel regions of the NSFET device formed. Inembodiments where the first semiconductor material 52 remain to form thenanosheets, inner spacers are formed proximate to the end portions ofthe second semiconductor material 54, as one of ordinary skill readilyappreciates.

Embodiments may achieve advantages. The disclosed method or structurereduces the parasitic capacitance of the NSFET device by forming airgaps between the inner spacers and the source/drain regions 112. Inaddition, epitaxial growth of the source/drain regions 112 arefacilitated by using a semiconductor material (e.g., silicon) as thematerial layer 56.

FIG. 20 illustrates a flow chart of a method of fabricating asemiconductor device, in accordance with some embodiments. It should beunderstood that the embodiment method shown in FIG. 20 is merely anexample of many possible embodiment methods. One of ordinary skill inthe art would recognize many variations, alternatives, andmodifications. For example, various steps as illustrated in FIG. 20 maybe added, removed, replaced, rearranged, or repeated.

Referring to FIG. 20, at step 1010, a dummy gate structure is formedover a nanostructure and over a fin, the nanostructure overlying thefin, the fin protruding above a substrate, the nanostructure comprisingalternating layers of a first semiconductor material and a secondsemiconductor material. At step 1020, openings are formed in thenanostructure on opposing sides of the dummy gate structure, theopenings exposing end portions of the first semiconductor material andend portions of the second semiconductor material. At step 1030, theexposed end portions of the first semiconductor material are recessed toform recesses. At step 1040, dummy inner spacers are formed in therecesses and a material layer is formed over the dummy inner spacers inthe recesses. As step 1050, source/drain regions are formed in theopenings after forming the material layer. At step 1060, after formingthe source/drain regions, the dummy gate structure is removed to exposethe first semiconductor material and the second semiconductor materialdisposed under the dummy gate structure. At step 1070, the exposed firstsemiconductor material and the dummy inner spacers are removed, whereinthe second semiconductor material remain and form a plurality ofnanosheets, wherein the material layer is exposed after removing thedummy inner spacers. At step 1080, inner spacers are formed between thesource/drain regions at opposite ends of the plurality of nanosheets,wherein each of the inner spacers seals an air gap between the each ofthe inner spacers and the material layer.

In an embodiment, a semiconductor device includes: a fin protrudingabove a substrate; source/drain regions over the fin; nanosheets betweenthe source/drain regions, where the nanosheets comprise a firstsemiconductor material; inner spacers between the nanosheets and atopposite ends of the nanosheets, where there is an air gap between eachof the inner spacers and a respective source/drain region of thesource/drain regions; and a gate structure over the fin and between thesource/drain regions. In an embodiment, the nanosheets are parallel toeach other and are parallel to a major upper surface of the substrate.In an embodiment, the semiconductor device further includes a materiallayer between each of the inner spacers and the respective source/drainregion, where the air gap is between each of the inner spacers and thematerial layer. In an embodiment, the material layer is a layer of asecond semiconductor material. In an embodiment, the first semiconductormaterial is a same as the second semiconductor material. In anembodiment, the source/drain regions have a plurality of protrusionsextending between the nanosheets toward the inner spacers, where thematerial layer extends conformally over the plurality of protrusions. Inan embodiment, the material layer is a layer of a first dielectricmaterial, and the inner spacers comprise a second dielectric material.In an embodiment, the first dielectric material is a same as the seconddielectric material. In an embodiment, the air gap is sealed in a spacebetween each of the inner spacers and the respective source/drainregion, and between adjacent ones of the nanosheets. In an embodiment,each of the inner spacers has a concave surface facing the gatestructure.

In an embodiment, a semiconductor device includes: a fin protrudingabove a substrate; a gate structure over the fin; source/drain regionsover the fin on opposing sides of the gate structure; a first channellayer and a second channel layer disposed between the source/drainregions and parallel to each other, where the gate structure wrapsaround the first channel layer and the second channel layer; and innerspacers disposed between end portions of the first channel layer and endportions of the second channel layer, where there are air gaps betweenthe inner spacers and the source/drain regions. In an embodiment, thesemiconductor device further includes a material layer between the innerspacers and the source/drain regions, where the air gaps are between theinner spacers and the material layer. In an embodiment, the materiallayer is semiconductor layer. In an embodiment, the material layer is adielectric layer. In an embodiment, the inner spacers and the materiallayer comprise a same dielectric material. In an embodiment, each of theinner spacers has a first concave surface facing the gate structure, andhas a second concave surface facing the source/drain regions.

In an embodiment, a method of forming a semiconductor device includes:forming a dummy gate structure over a nanostructure and over a fin, thenanostructure overlying the fin, the fin protruding above a substrate,the nanostructure comprising alternating layers of a first semiconductormaterial and a second semiconductor material; forming openings in thenanostructure on opposing sides of the dummy gate structure, theopenings exposing end portions of the first semiconductor material andend portions of the second semiconductor material; recessing the exposedend portions of the first semiconductor material to form recesses;forming dummy inner spacers in the recesses and a material layer overthe dummy inner spacers in the recesses; forming source/drain regions inthe openings after forming the material layer; after forming thesource/drain regions, removing the dummy gate structure to expose thefirst semiconductor material and the second semiconductor materialdisposed under the dummy gate structure; removing the exposed firstsemiconductor material and the dummy inner spacers, where the secondsemiconductor material remain and form a plurality of nanosheets, wherethe material layer is exposed after removing the dummy inner spacers;and forming inner spacers between the source/drain regions at oppositeends of the plurality of nanosheets, where each of the inner spacersseals an air gap between the each of the inner spacers and the materiallayer. In an embodiment, the method further includes after forming theinner spacers, forming a replacement gate structure that wraps aroundthe plurality of nanosheets. In an embodiment, forming the materiallayer comprises forming the material layer using a semiconductormaterial. In an embodiment, forming the material layer comprises formingthe material layer using a dielectric material.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device comprising: a finprotruding above a substrate; source/drain regions over the fin;nanosheets between the source/drain regions; inner spacers between endportions of the nanosheets; a material layer between each of the innerspacers and a respective source/drain region, wherein there is an airgap between each of the inner spacers and the material layer, whereinthe source/drain regions have a plurality of protrusions extending intospaces between the nanosheets, wherein the material layer contacts theplurality of protrusions; and a gate structure over the fin and betweenthe source/drain regions.
 2. The semiconductor device of claim 1,wherein the nanosheets comprises a semiconductor material, wherein thegate structure wraps around the nanosheets.
 3. The semiconductor deviceof claim 1, wherein the material layer extends conformally alongsurfaces of the plurality of protrusions of the source/drain regions. 4.The semiconductor device of claim 1, wherein a width of the air gap,measured between each of the inner spacers and the material layer,increases along a first direction from a center of two adjacentnanosheets toward one of the two adjacent nanosheets.
 5. Thesemiconductor device of claim 4, wherein a height of the air gap has afirst value measured between each of the inner spacers and the materiallayer, and has a second value measured between the material layer and arespective nanosheet, wherein the first value increases along a seconddirection from each of the inner spacers toward the material layer, andthe second value decreases along the second direction.
 6. Thesemiconductor device of claim 1, wherein the material layer is asemiconductor material.
 7. The semiconductor device of claim 6, whereinthe material layer and the nanosheets comprise the same semiconductormaterial.
 8. The semiconductor device of claim 1, wherein the materiallayer is a first dielectric material, and the inner spacers is a seconddielectric material.
 9. The semiconductor device of claim 8, wherein thefirst dielectric material is the same as the second dielectric material.10. The semiconductor device of claim 1, wherein the air gap is sealedhorizontally between each of the inner spacers and the material layer,and is sealed vertically between the material layer and a respectivenanosheet.
 11. The semiconductor device of claim 1, wherein each of theinner spacers has a first concave surface facing the gate structure, andhas a second concave surface facing the material layer.
 12. Asemiconductor device comprising: a fin protruding above a substrate; agate structure over the fin; source/drain regions over the fin onopposite sides of the gate structure; a first channel layer and a secondchannel layer disposed between the source/drain regions and parallel toeach other, wherein the gate structure wraps around the first channellayer and the second channel layer; and inner spacers disposed betweenend portions of the first channel layer and end portions of the secondchannel layer, wherein there are air gaps between the inner spacers andthe source/drain regions, wherein a first thickness of a first innerspacer of the inner spacers, measured at a center location between thefirst channel layer and the second channel layer, is smaller than asecond thickness of the first inner spacer measured at an interfacebetween the first inner spacer and the first channel layer.
 13. Thesemiconductor device of claim 12, wherein the first thickness of thefirst inner spacer is smaller than a third thickness of the first innerspacer measured at an interface between the first inner spacer and thesecond channel layer.
 14. The semiconductor device of claim 12, whereineach of the inner spacers has a first concave surface facing the gatestructure, and has a second concave surface facing a nearest one of thesource/drain regions.
 15. The semiconductor device of claim 12, furthercomprising a material layer between the inner spacers and thesource/drain regions, wherein the air gaps are between the inner spacersand the material layer.
 16. The semiconductor device of claim 15,wherein the material layer is semiconductor material or a dielectricmaterial.
 17. The semiconductor device of claim 15, wherein the innerspacers and the material layer comprise the same dielectric material.18. A method of forming a semiconductor device, the method comprising:forming a dummy gate structure over a nanostructure, wherein thenanostructure overlies a fin that protrudes above a substrate, thenanostructure comprising alternating layers of a first semiconductormaterial and a second semiconductor material; forming openings in thenanostructure on opposing sides of the dummy gate structure; recessingend portions of the first semiconductor material exposed by the openingsto form recesses; forming dummy inner spacers in the recesses; formingsource/drain regions in the openings after forming the dummy innerspacers; after forming the source/drain regions, removing the dummy gatestructure to expose the first semiconductor material and the secondsemiconductor material disposed under the dummy gate structure; removingthe exposed first semiconductor material and the dummy inner spacers,wherein the second semiconductor material under the dummy gate structureremains to form a plurality of nanosheets; and after the removing,forming inner spacers between the source/drain regions at opposite endsof the plurality of nanosheets, wherein air gaps are sealed between theinner spacers and the source/drain regions.
 19. The method of claim 18,further comprising after forming the inner spacers, forming areplacement gate structure that wraps around the plurality ofnanosheets.
 20. The method of claim 18, further comprising, afterforming the dummy inner spacers and before forming the source/drainregions, forming a material layer in the recesses along the dummy innerspacers, wherein the air gaps are formed between the inner spacers andthe material layer.